High Performance GaN HEMTs on 3-inch SI-SiC Substrates

Gallium Nitride (GaN) HEMTs are the focus of intense research and development due to their potential for the realization of MMIC power amplifiers (PAs) with high gain and record levels of power delivery [1]. Much of the work in GaN HEMT development has been concentrated on performance demonstration on 2” SiC and Sapphire substrates. Multiple groups have demonstrated GaN HEMTs delivering record power performance at microwave and mmWave frequencies [2,3]. Recently, there has also been major progress in the improvement of uniformity and reproducibility of GaN HEMT 2” epitaxial wafers on both substrates, available through multiple electronic material foundries [4,5]. Of the two substrates, SiC offers a better thermal conductivity and lower dislocations in the GaN film, which has a large impact on the performance of GaN power devices. However, until recently, only 2” SI-SiC was available for GaN HEMT development. Scaling of the GaN technology to 3” will result in doubling the number of MMIC die per wafer. This will be instrumental in the reduction of the overall cost of GaN-based MMICs, and ultimately, in the introduction of this technology into commercial and military systems.